SUD08P06-155L features ? trenchfet ? power mosfets ? 175 c rated maximum junction temperature product summary v ds (v) r ds(on) ( ) i d (a) q g (typ) - 60 0.155 at v gs = - 10 v - 8.4 12.5 0.280 at v gs = - 4.5 v - 7.4 to-252 s gd top view drain connected to tab ordering information: SUD08P06-155L-e3 (lead (pb)-free) s g d p-channel mosfet notes: a. see soa curve for voltage derating. b. surface mounted on 1" x 1" fr-4 boad. absolute maximum ratings t c = 25 c, unless otherwise noted parameter symbol limit unit gate-source voltage v gs 20 v continuous drain current (t j = 175 c) t c = 25 c i d - 8.4 a t c = 100 c - 6 pulsed drain current i dm - 18 continuing source current (diode conduction) i s - 8.4 avalanche current i as - 12 single pulse avalanche energy l = 0.1 mh e as 7.2 mj maximum power dissipation t c = 25 c p d 25 a w t a = 25 c 2 b operating junction and storage temperature range t j , t stg - 55 to 175 c thermal resistance ratings parameter symbol typical maximum unit junction-to-ambient b t 10 sec r thja 20 25 c/w steady state 62 75 junction-to-case r thjc 56 rohs compliant p-channel 60 v (d-s) 175 c mosfet www.freescale.net.cn 1 / 6
notes: a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2 %. c. independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min typ a max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = - 250 a - 60 v gate threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 1.0 - 2.0 - 3.0 gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = - 60 v, v gs = 0 v - 1 a v ds = - 60 v, v gs = 0 v, t j = 125 c - 50 v ds = - 60 v, v gs = 0 v, t j = 175 c - 150 on-state drain current b i d(on) v ds = - 5 v, v gs = - 10 v - 10 a drain-source on-state resistance b r ds(on) v gs = - 10 v, i d = - 5 a 0.125 0.155 v gs = - 10 v, i d = - 5 a, t j = 125 c 0.280 v gs = - 10 v, i d = - 5 a, t j = 175 c 0.350 v gs = - 4.5 v, i d = - 2 a 0.158 0.280 forward transconductance b g fs v ds = - 15 v, i d = - 5 a 8s dynamic input capacitance c iss v ds = - 25 v, v gs = 0 v, f = 1 mhz 450 pf output capacitance c oss 65 reverse transfer capacitance c rss 40 total gate charge q g v ds = - 30 v, v gs = - 10 v, i d = - 8.4 a 12.5 19 nc gate-source charge q gs 2.3 gate-drain charge q gd 3.2 gate resistance r g f = 1 mhz 8.0 tu r n - o n d e l ay t i m e c t d(on) v dd = - 30 v, r l = 3.57 i d ? - 8.4 a, v gen = - 10 v, r g = 2.5 510 ns rise time c t r 14 25 turn-off delay time c t d(off) 15 25 fall time c t f 712 source-drain diode ratings and characteristics (t c = 25 c) b pulsed current i sm - 20 a forward voltage b v sd i f = - 2 a, v gs = 0 v - 0.9 - 1.3 v reverse recovery time t rr i f = - 8 a, di/dt = 100 a/s 50 80 ns reverse recovery time q rr 80 120 nc www.freescale.net.cn 2 / 6 SUD08P06-155L p-channel 60 v (d-s) 175 c mosfet
typical characteristics 25 c unless noted output characteristics transconductance capacitance 0 6 12 1 8 24 30 0246 8 10 v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d v gs = 10 thr u 6 v 3 v 4 v 5 v 0 2 4 6 8 10 12 0246 8 10 - transcond u ctance (s) g fs t c = - 55 c 25 c 125 c i d - drain c u rrent (a) 0 100 200 300 400 500 600 700 8 00 0 102030405060 v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) c rss c iss c oss transfer characteristics on-resistance vs. drain current gate charge 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 25 c 125 c t c = - 55 c 0.00 0.05 0.10 0.15 0.20 0.25 0.30 04 8 12 16 20 - on-resistance ( ) i d - drain c u rrent (a) r ds(on) v gs = 4.5 v v gs = 10 v 0 4 8 12 16 20 0 5 10 15 20 25 - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs v ds = 30 v i d = 8 .4 a www.freescale.net.cn 3 / 6 SUD08P06-155L p-channel 60 v (d-s) 175 c mosfet
typical characteristics 25 c unless noted thermal ratings on-resistance vs. junction temperature 0.5 0. 8 1.1 1.4 1.7 2.0 2.3 - 50 - 25 0 25 50 75 100 125 150 175 t j - j u nction temperat u re (c) v gs = 10 v i d = 50 a r ds(on) - on-resistance ( n ormalized) source-drain diode forward voltage 0.0 0.2 0.4 0.6 0. 8 1.0 v sd - so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 10 1 0.001 t j = 25 c t j = 150 c 0.1 0.01 drain current vs. case temperature 0 2 4 6 8 10 0 25 50 75 100 125 150 175 t c - case temperat u re (c) - drain c u rrent (a) i d safe operating area - drain c u rrent (a) i d 100 10 0.001 0.1 1 10 100 0.1 t c = 25 c single p u lse 1 ms 10 ms 100 ms, dc 10 s 100 s *limited b y r ds(on) v ds - drain-to-so u rce v oltage ( v ) * v gs minim u m v gs at w hich r ds(on) is specified 1 0.01 www.freescale.net.cn 4 / 6 SUD08P06-155L p-channel 60 v (d-s) 175 c mosfet
thermal ratings normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 0 0 6 0 1 1 10 -1 10 -? 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 n ormalized effecti v e transient thermal impedance sq u are w a v e p u lse d u ration (sec) normalized thermal transient impedance, junction-to-case 10 -3 10 -2 0 0 6 0 1 1 10 -1 10 -? 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 n ormalized effecti v e transient thermal impedance sq u are w a v e p u lse d u ration (sec) www.freescale.net.cn 5 / 6 SUD08P06-155L p-channel 60 v (d-s) 175 c mosfet
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